IPI126N10N3 G
Manufacturer Part Number | IPI126N10N3 G |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 100V 58A TO262-3 |
Package | PG-TO262-3 |
In Stock | 6166 pcs |
Data sheet | Part Number GuideMultiple Devices 04/Jul/2014 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.5V @ 46µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO262-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 12.6mOhm @ 46A, 10V |
Power Dissipation (Max) | 94W (Tc) |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Package | Tube |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Base Product Number | IPI126N |
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